| PART |
Description |
Maker |
| M27V405 |
NND - 4 MBIT (512KB X8) LOW VOLTAGE OTP EPROM
|
ST Microelectronics
|
| M29W800DT M29W800DT70M1T M29W800DT70M6T M29W800DT7 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
|
STMicroelectronics
|
| M29W800DB45M6E M29W800DB45M6F M29W800DB45M6T M29W8 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29F800AB70N1 M29F800AB70N6 M29F800AB70M1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M27V801-200P6TR M27V801 M27V801-120F1TR M27V801-12 |
NND - 8 MBIT (1MB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
Hex Inverting Drivers 14-PDIP 0 to 70
Hex Inverting Drivers 14-SO 0 to 70
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 8兆x8低压紫外线EPROM和检察官办公室存储器
Quadruple 2-Input Positive-AND Buffers/Drivers 14-SOIC 0 to 70 8兆x8低压紫外线EPROM和检察官办公室存储器
Hex Inverting Drivers 14-SOIC 0 to 70 8兆x8低压紫外线EPROM和检察官办公室存储器
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM 81兆x8低压紫外线EPROM和检察官办公室存储器
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| MPC2105A MPC2106ASG66 MPC2105B |
(MPC2105x / MPC2106x) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE TAG SRAM MODULE, 9 ns, DMA178
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 512KBMB的二级缓存模块BurstRAM为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| MPC2105C MPC2106CDG66 |
(MPC2105C / MPC2106C) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| M27C400 6674 M27C400-80XF6TR M27C400-100B1TR M27C4 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MPC2105BSG66 MPC2105ASG66 MPC2105A MPC2106ASG66 MP |
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M36W108 M36W108B M36W108B100ZM1T M36W108B100ZM5T M |
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
